Basic information about the performance and benchmark results of the model Tower Semiconductor AS6E8E63B-6E1A 512MB. The actual tests reflect the performance of the memory module in relation to modules of the same type. The tests of DDR3, DDR4 and DDR5 memory modules use Intel and AMD processors.
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RAM Tower Semiconductor AS6E8E63B-6E1A 512MB - Tests and Specs
- Other name: Tower Semiconductor AS6E8E63B-6E1A
- Description: PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
- RAM type: DDR2
- Average: 307
Buy here:
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General info
Description: Memory module performance specifications: Latency (ns), Read Uncached (GB/s), Write (GB/s). Price information.
RAM Specifications
| Latency: | 72 ns | Read Uncached: | 2,654.8 GB/s | |||
| Write: | 1,094.0 GB/s | Price: | NA | |||
Latency
Latency - the time it takes the RAM module to access a particular set of data in one of the columns and output that data to its outputs.
Read Uncached Transfer Speed
RAM read performance index
5.4 GB/s
5.5 GB/s
4.5 GB/s
4.6 GB/s
4.3 GB/s
Write Transfer Speed
RAM write performance index
2.6 GB/s
2.5 GB/s
1.9 GB/s
2.1 GB/s
1.9 GB/s
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Reviews of Tower Semiconductor AS6E8E63B-6E1A 512MB
Tower Semiconductor AS6E8E63B-6E1A 512MB
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