Basic information about the performance and benchmark results of the model Shenzhen Micro Innovation Industry KF3200DDCD4 16GB. The actual tests reflect the performance of the memory module in relation to modules of the same type. The tests of DDR3, DDR4 and DDR5 memory modules use Intel and AMD processors.
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RAM Shenzhen Micro Innovation Industry KF3200DDCD4 16GB - Tests and Specs
- Other name: Shenzhen Micro Innovation Industry KF3200DDCD4
- Description: PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
- RAM type: DDR4
- Average: 3649
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General info
Description: Memory module performance specifications: Latency (ns), Read Uncached (GB/s), Write (GB/s). Price information.
RAM Specifications
Latency: | 31 ns | Read Uncached: | 20.5 GB/s | |||
Write: | 15.5 GB/s | Price: | NA |
Latency
Latency - the time it takes the RAM module to access a particular set of data in one of the columns and output that data to its outputs.
Read Uncached Transfer Speed
RAM read performance index
17.9 GB/s
18.3 GB/s
13.8 GB/s
16.1 GB/s
18.2 GB/s
18.5 GB/s
13.9 GB/s
16.1 GB/s
16.8 GB/s
Write Transfer Speed
RAM write performance index
13.8 GB/s
14.5 GB/s
10.1 GB/s
11.7 GB/s
14.6 GB/s
14.4 GB/s
9.9 GB/s
13.0 GB/s
12.8 GB/s
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Reviews of Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
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