Basic information about the performance and benchmark results of the model TwinMOS 9DSSCN4E-TATP 4GB. The actual tests reflect the performance of the memory module in relation to modules of the same type. The tests of DDR3, DDR4 and DDR5 memory modules use Intel and AMD processors.
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RAM TwinMOS 9DSSCN4E-TATP 4GB - Tests and Specs
- Other name: TwinMOS 9DSSCN4E-TATP
- Description: PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
- RAM type: DDR3
- Average: 1383
Buy here:
AliExpress
General info
Description: Memory module performance specifications: Latency (ns), Read Uncached (GB/s), Write (GB/s). Price information.
RAM Specifications
| Latency: | 27 ns | Read Uncached: | 10.0 GB/s | |||
| Write: | 4.5 GB/s | Price: | NA | |||
Latency
Latency - the time it takes the RAM module to access a particular set of data in one of the columns and output that data to its outputs.
Read Uncached Transfer Speed
RAM read performance index
14.4 GB/s
14.4 GB/s
14.5 GB/s
15.5 GB/s
14.7 GB/s
14.5 GB/s
11.9 GB/s
16.4 GB/s
10.0 GB/s
Write Transfer Speed
RAM write performance index
8.8 GB/s
8.8 GB/s
9.1 GB/s
10.1 GB/s
9.2 GB/s
8.1 GB/s
11.4 GB/s
4.5 GB/s
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