Basic information about the performance and benchmark results of the model Samsung M2S4G64CB8HD5N-CG 4GB. The actual tests reflect the performance of the memory module in relation to modules of the same type. The tests of DDR3, DDR4 and DDR5 memory modules use Intel and AMD processors.
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RAM Samsung M2S4G64CB8HD5N-CG 4GB - Tests and Specs
- Other name: Samsung M2S4G64CB8HD5N-CG
- Description: PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
- RAM type: DDR3
- Average: 1160
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General info
Description: Memory module performance specifications: Latency (ns), Read Uncached (GB/s), Write (GB/s). Price information.
RAM Specifications
Latency: | 42 ns | Read Uncached: | 7.6 GB/s | |||
Write: | 6.2 GB/s | Price: | NA |
Latency
Latency - the time it takes the RAM module to access a particular set of data in one of the columns and output that data to its outputs.
Read Uncached Transfer Speed
RAM read performance index
14.4 GB/s
14.4 GB/s
14.5 GB/s
15.5 GB/s
14.7 GB/s
14.5 GB/s
11.9 GB/s
16.4 GB/s
7.6 GB/s
Write Transfer Speed
RAM write performance index
8.8 GB/s
8.8 GB/s
9.1 GB/s
10.1 GB/s
9.2 GB/s
8.1 GB/s
11.4 GB/s
6.2 GB/s
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Reviews of Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M2S4G64CB8HD5N-CG 4GB
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