Basic information about the performance and benchmark results of the model Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB. The actual tests reflect the performance of the memory module in relation to modules of the same type. The tests of DDR3, DDR4 and DDR5 memory modules use Intel and AMD processors.
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RAM Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9 4GB - Tests and Specs
- Other name: Hynix Semiconductor (Hyundai Electronics) HMT351U6BFR8C-H9
- Description: PC3-10600, 1.5V, CAS Supported: 6 7 8 9
- RAM type: DDR3
- Average: 2084
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General info
Description: Memory module performance specifications: Latency (ns), Read Uncached (GB/s), Write (GB/s). Price information.
RAM Specifications
| Latency: | 27 ns | Read Uncached: | 12.4 GB/s | |||
| Write: | 7.8 GB/s | Price: | NA | |||
Latency
Latency - the time it takes the RAM module to access a particular set of data in one of the columns and output that data to its outputs.
Read Uncached Transfer Speed
RAM read performance index
14.4 GB/s
14.4 GB/s
14.5 GB/s
15.5 GB/s
14.7 GB/s
14.5 GB/s
11.9 GB/s
16.4 GB/s
Write Transfer Speed
RAM write performance index
8.8 GB/s
8.8 GB/s
9.1 GB/s
10.1 GB/s
9.2 GB/s
8.1 GB/s
11.4 GB/s
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